SILICON CARBIDE WAFER PROCESSING METHOD BY PHOTOELECTROCHEMICAL ETCHING

• Main Authors: NAKAJIMA KENJI, ISHII EIKO, SUGIZAKI DAISUKE
• Format: Patent
• Language: English; Japanese
• Published: 25.04.2019
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide a technique which can achieve a uniform process on a surface of a SiC wafer by photoelectrochemical etching.SOLUTION: A method for processing a SiC wafer by photoelectrochemical etching comprises the steps of: disposing the SiC wafer in an etchant; disposing an electrode plate so as to be opposed to a surface of the SiC wafer in the etchant, provided that the electrode plate has an opening formed therein so as to correspond to a shape to process on the SiC wafer; and putting a voltage between the SiC wafer and the electrode plate and in parallel, applying light to the SiC wafer surface from a side opposite to the electrode plate to selectively exposing the SiC wafer surface through the opening of the electrode plate.SELECTED DRAWING: Figure 1 【課題】光電気化学エッチングによって、ＳｉＣウェハの表面に対して均一な加工を実現し得る技術を提供する。【解決手段】光電気化学エッチングによるＳｉＣウェハの加工方法であって、エッチング溶液中にＳｉＣウェハを配置する工程と、ＳｉＣウェハへの加工形状に対応する開口が形成された電極板を、エッチング溶液中でＳｉＣウェハの表面に対向するように配置する工程と、ＳｉＣウェハと電極板との間に電圧を印加しながら、ＳｉＣウェハの表面に向けて電極板の反対側から光を照射し、電極板の開口を通じてＳｉＣウェハの表面を選択的に露光する工程とを備える。【選択図】図１