THROUGH-ELECTRODE SUBSTRATE AND MANUFACTURING METHOD THEREOF
To provide: a through-electrode substrate having high reliability to high-temperature treatment; and a manufacturing method of the through-electrode substrate having the high reliability to the high-temperature treatment.SOLUTION: A through-electrode substrate 104 comprises: a substrate having a fir...
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Main Authors | , , , , , |
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Format | Patent |
Language | English Japanese |
Published |
25.04.2019
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Subjects | |
Online Access | Get full text |
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Summary: | To provide: a through-electrode substrate having high reliability to high-temperature treatment; and a manufacturing method of the through-electrode substrate having the high reliability to the high-temperature treatment.SOLUTION: A through-electrode substrate 104 comprises: a substrate having a first face 140a, a second face 140b, and a through-hole 126 penetrating the first face and the second face; a through-electrode 118 provided in the through-hole; first wiring 122, provided on the first face, which has a center line 200a that substantially coincides with the center line of the through-hole and has a first opening 123 with a hole diameter D2 that is larger than a hole diameter D1 of the through-hole; an insulation film, provided on the first face and the first wiring, which has a center line that substantially coincides with the center line of the first opening and has a second opening 124a with a hole diameter D3 that is larger than the hole diameter of the first opening; and second wiring 110 which is provided on the insulation film so as to be electrically connected to the first wiring via an opening different from the second opening.SELECTED DRAWING: Figure 4
【課題】高温処理に対する信頼性が高い貫通電極基板と、高温処理に対する信頼性が高い貫通電極基板の製造方法を提供する。【解決手段】貫通電極基板104であって、第1面140aと、第2面140bと、第1面と第2面とを貫通する貫通孔126と、を有する基板と、貫通孔に設けられる貫通電極118と、中心線200aが貫通孔の中心線と略一致し、孔径D2が貫通孔の孔径D1よりも大きい第1開口123部を有し、第1面上に設けられる第1配線122と、中心線が第1開口部の中心線と略一致し、孔径D3が第1開口部の孔径よりも大きい第2開口部124aを有し、第1面及び第1配線上に設けられる絶縁膜と、絶縁膜上に設けられ、第2開口部とは異なる開口部を介して、第1配線と電気的に接続される第2配線110と、を有する。【選択図】図4 |
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Bibliography: | Application Number: JP20170188369 |