COMPOSITION FOR THICK FILM RESISTOR, THICK FILM RESISTANCE PASTE AND THICK FILM RESISTOR

• Main Author: NAGANO TAKAHITO
• Format: Patent
• Language: English; Japanese
• Published: 18.04.2019
• Subjects: BASIC ELECTRIC ELEMENTS; CASTING; CHEMISTRY; COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F; ELECTRICITY; INORGANIC CHEMISTRY; MAKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; METALLURGY; PERFORMING OPERATIONS; POWDER METALLURGY; RESISTORS; TRANSPORTING; WORKING METALLIC POWDER

To provide a composition for a thick film resistor, which has a large resistance value-falling rate as a quantity of change of a resistance value which can be adjusted by using an adjustment method by pulse trimming in resistor formation, and provide a thick film resistance paste and a thick film resistor.SOLUTION: A composition for a thick film resistor comprises: ruthenium oxide-based conductive substance powder consisting of a powder mixture of ruthenium oxide and lead ruthenate; and glass frit. The composition further comprises 16 mass% or more and 33 mass% or less of silver powder. When a thick film resistance paste arranged by adding an organic vehicle thereto is sintered to form a thick film resistor, the falling rate of a resistance value which can be adjusted by using an adjustment method by pulse trimming is larger than 5% in the thick film resistor.SELECTED DRAWING: None 【課題】抵抗体形成時におけるパルストリミングによる調整手法を用いて調整可能な抵抗値の変化量としての抵抗値の低下率が大きな厚膜抵抗体用組成物、厚膜抵抗ペースト及び厚膜抵抗体を提供する。【解決手段】酸化ルテニウムとルテニウム酸鉛の混合粉末からなる酸化ルテニウム系導電物粉末と、ガラスフリットを含有する厚膜抵抗体用組成物において、１６質量％以上３３質量％以下の銀粉末を更に含有し、有機ビヒクルを加えた厚膜抵抗ペーストを焼結して厚膜抵抗体を形成したときの、厚膜抵抗体におけるパルストリミングによる調整手法を用いて調整可能な抵抗値の低下率が５％より大きくなるようにした。【選択図】なし