PHOTODETECTOR, OPTICAL DETECTION DEVICE, LIDAR DEVICE AND MANUFACTURING METHOD OF PHOTODETECTOR
To provide a photodetector which accurately performs optical detection even in a case where a subject distance range is wide, and to provide an optical detection device, a lidar device and a manufacturing method of the photodetector.SOLUTION: A photodetector comprises at least one first cell 1 which...
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Main Authors | , , , |
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Format | Patent |
Language | English Japanese |
Published |
11.04.2019
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Subjects | |
Online Access | Get full text |
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Summary: | To provide a photodetector which accurately performs optical detection even in a case where a subject distance range is wide, and to provide an optical detection device, a lidar device and a manufacturing method of the photodetector.SOLUTION: A photodetector comprises at least one first cell 1 which converts an incident light into electric charge, and at least one second cell 2 which converts an incident light into electric charge. The first cell 1 includes a first semiconductor layer 5, a second semiconductor layer 6, and a first substrate holding the first semiconductor layer 5 with the second semiconductor layer 6. The second cell 2 includes a third semiconductor layer 8, a fourth semiconductor layer 9, and a second substrate holding the third semiconductor layer 8 with the fourth semiconductor layer 9. The second substrate is thicker than the first substrate.SELECTED DRAWING: Figure 1
【課題】本発明の実施形態は、被写体距離範囲が広い場合でも、正確に光検出する本発明の実施形態は、被写体距離範囲が広い場合でも、正確に光検出する光検出器、光検出装置、ライダー装置及び光検出器の製造方法を提供する。【解決手段】上記の課題を達成するために、実施形態の光検出器は、入射した光を電荷に変換する、少なくとも一つの第1セル1と、入射した光を電荷に変換する、少なくとも一つの第2セル2と、を具備し、第1セル1は、第1半導体層5と、第2半導体層6と、第1半導体層5を第2半導体層6と挟む第1基板と、を含み、第2セル2は、第3半導体層8と、第4半導体層9と、第3半導体層8を第4半導体層9と挟む第2基板と、を含み、第2基板が、第1基板の厚さよりも厚い。【選択図】図1 |
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Bibliography: | Application Number: JP20170180201 |