MEMORY DEVICE

• Main Authors: FUJINO YORINOBU, OSADA YOSHIAKI, HATSUDA KOSUKE, ZHOU JIE YUN
• Format: Patent
• Language: English; Japanese
• Published: 11.04.2019
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INFORMATION STORAGE; PHYSICS; SEMICONDUCTOR DEVICES; STATIC STORES

To provide a memory device having high quality.SOLUTION: A memory device includes: a memory cell; a preamplifier for performing a first read for generating a first voltage by providing a first current to the memory cell via a first path and providing a second current relating to the first current vi...