MEMORY DEVICE

• Main Authors: FUJINO YORINOBU, OSADA YOSHIAKI, HATSUDA KOSUKE, ZHOU JIE YUN
• Format: Patent
• Language: English; Japanese
• Published: 11.04.2019
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INFORMATION STORAGE; PHYSICS; SEMICONDUCTOR DEVICES; STATIC STORES

To provide a memory device having high quality.SOLUTION: A memory device includes: a memory cell; a preamplifier for performing a first read for generating a first voltage by providing a first current to the memory cell via a first path and providing a second current relating to the first current via a second path electrically separated from the first path, and performing a second read for generating a second voltage, by writing a first data to the memory cell where the first read is performed, providing a third current to the memory cell where the first data is written via the first path, and providing a fourth current relating to the third current via the second path; and a sense amplifier that determines the data stored in the memory cell when the first read is performed on the basis of the first voltage and the second voltage.SELECTED DRAWING: Figure 5 【課題】高品質なメモリデバイスを提供する。【解決手段】メモリデバイスは、メモリセルと、第１経路を介して前記メモリセルに対して第１電流を流し、前記第１経路とは電気的に分離された第２経路を介して前記第１電流に関する第２電流を流すことで、第１電圧を生成する第１読み出しを行い、前記第１読み出しを行った前記メモリセルに、第１データの書込みを行い、前記第１データが書き込まれた前記メモリセルに対し、前記第１経路を介して第３電流を流し、前記第２経路を介して前記第３電流に関する第４電流を流すことで第２電圧を生成する第２読み出しを行うプリアンプと、前記第１電圧及び前記第２電圧に基づいて、前記第１読み出しを行う時に前記メモリセルに記憶されていたデータを判定するセンスアンプと、を備える。【選択図】 図５