CHARGE DETECTION SENSOR AND POTENTIAL MEASUREMENT SYSTEM
To reduce noise and improve sensitivity by reducing a parasitic capacitance in a charge detection sensor.SOLUTION: The charge detection sensor includes a detection element, a detection electrode 120, and a contact 210. The detection element is provided on one surface of a semiconductor substrate 100...
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Main Authors | , , , , |
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Format | Patent |
Language | English Japanese |
Published |
11.04.2019
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Subjects | |
Online Access | Get full text |
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Summary: | To reduce noise and improve sensitivity by reducing a parasitic capacitance in a charge detection sensor.SOLUTION: The charge detection sensor includes a detection element, a detection electrode 120, and a contact 210. The detection element is provided on one surface of a semiconductor substrate 100 to detect electric charges. The detection electrode 120 is provided on the other surface of the semiconductor substrate 100. The contact 210 electrically connects the detection electrode 120 to the detection element through the semiconductor substrate 100. Since a wiring layer 200 is not formed between the detection element and the detection electrode 120, a parasitic capacitance is reduced.SELECTED DRAWING: Figure 3
【課題】電荷検出センサにおける寄生容量を低減して、ノイズの減少および感度の向上を図る。【解決手段】電荷検出センサは、検出素子と、検出電極120と、コンタクト210とを備える。検出素子は、半導体基板100の一方の面に設けられて、電荷を検出する。検出電極120は、半導体基板100の一方の面とは異なる他方の面に設けられる。コンタクト210は、半導体基板100を貫通して検出電極120と検出素子とを電気的に接続する。検出素子と検出電極120との間には配線層200は形成されないため、寄生容量が低減される。【選択図】図3 |
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Bibliography: | Application Number: JP20170179872 |