SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD

• Main Authors: AKEBOSHI HIRONARI, YOSHIMIZU YASUTO, KITAGAWA HAKUBA, ITO FUYUMA
• Format: Patent
• Language: English; Japanese
• Published: 04.04.2019
• Subjects: APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; METALLURGY; PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROMOBJECTS; SEMICONDUCTOR DEVICES

To provide a substrate processing apparatus more suitable for metal film etching.SOLUTION: The substrate processing apparatus includes: a noble-metal-containing member having an uneven portion or a porous portion containing a noble metal; and a chemical solution supply member for supplying a chemical solution. The substrate processing apparatus is configured to supply the chemical solution to etch away the metal while contacting a convex portion of the uneven portion or the porous portion with a predetermined metal surface.SELECTED DRAWING: Figure 1 【課題】より金属膜のエッチングに適した基板処理装置を提供する。【解決手段】実施形態によれば、基板処理装置は、貴金属を含む凹凸形状部分または多孔質形状部分を有する貴金属含有部材と、薬液を供給する薬液供給部材と、を備え、所定の金属表面に凹凸形状部分の凸部または多孔質形状部分を接触させつつ、薬液を金属表面に供給して金属をエッチング除去する。【選択図】図１