MULTI-REGIME PLASMA WAFER PROCESSING TO INCREASE ION DIRECTIONALITY

• Main Authors: KENNETH LUCCHESI, ALEXEI MARAKHTANOV, JOHN PATRICK HOLLAND, FELIX KOZAKEVICH, CHEN ZHIGANG, ZHAO LIN
• Format: Patent
• Language: English; Japanese
• Published: 04.04.2019
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

SOLUTION: There are provided a system and a method for providing multi-regime plasma wafer processing. The system and the method have three states. Etching operation is performed during the first of these states. The power level of the kilohertz radio frequency signal is higher than zero to increase the directionality of ions incident on the bottom of a stack layer during the second of these states. There is a reduction in the loss of a mask on top of the stack layer, and deposition can be performed during the third of these states.EFFECT: The perpendicularity of ions incident on the bottom of a stack layer is increased while the etch rate or throughput is increased.SELECTED DRAWING: Figure 2 【解決手段】マルチレジームプラズマウエハ処理を提供するためのシステムおよび方法が開示されている。システムおよび方法は、３つの状態を有する。それらの状態の内の第１状態中に、エッチング動作が実行される。それらの状態の内の第２状態中に、キロヘルツ高周波信号の電力レベルは、スタック層の底面に入射するイオンの方向性を増大させるために、０より高い。それらの状態の内の第３状態中に、スタック層の上部のマスクの損失の低減があり、蒸着が実行されうる。【効果】エッチング速度またはスループットを増大させると同時に、スタック層の底面に入射するイオンの垂直方向性を増大させる。【選択図】図２