SUBSTRATE PROCESSING DEVICE, SUBSTRATE PROCESSING METHOD, AND COMPUTER STORAGE MEDIUM
To properly perform substrate processing using a processing liquid in accordance with the warpage of a substrate.SOLUTION: A development processor 30 includes: a spin chuck 300 for holding a wafer W; a development liquid nozzle 320 for supplying a development liquid to the surface of the wafer W hel...
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Main Author | |
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Format | Patent |
Language | English Japanese |
Published |
28.03.2019
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Subjects | |
Online Access | Get full text |
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Summary: | To properly perform substrate processing using a processing liquid in accordance with the warpage of a substrate.SOLUTION: A development processor 30 includes: a spin chuck 300 for holding a wafer W; a development liquid nozzle 320 for supplying a development liquid to the surface of the wafer W held by the spin chuck 300; a ring member 382 provided annularly on the rear face side of the wafer W and having a diameter smaller than that of the wafer W; a lifting/lowering unit 383 for lifting and lowering the ring member 382; a warpage measurement unit 340 for measuring a warpage of the wafer W; and a control unit for controlling the lifting/lowering unit 383 so as to make a space between the rear face of the wafer W and the ring member 382 a prescribed distance on the basis of the warpage information measured by the warpage measurement unit 340.SELECTED DRAWING: Figure 4
【課題】基板の反りに応じて、処理液を用いた基板処理を適切に行う。【解決手段】現像処理装置30は、ウェハWを保持するスピンチャック300と、スピンチャック300に保持されたウェハWの表面に現像液を供給する現像液ノズル320と、ウェハWの裏面側に環状に設けられ、ウェハWより小さい径を有するリング部材382と、リング部材382を昇降させる昇降部383と、ウェハWの反りを計測する反り計測部340と、反り計測部340により計測された反り情報に基づいて、ウェハWの裏面とリング部材382との間が所定距離になるように昇降部383を制御する制御部と、を備える。【選択図】図4 |
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Bibliography: | Application Number: JP20170173703 |