ELECTRONIC DEVICE AND MANUFACTURING METHOD THEREOF

• Main Author: ITO HIROHIDE
• Format: Patent
• Language: English; Japanese
• Published: 28.03.2019
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

To provide an electronic device which is superior in stability by reducing transmission of moisture and oxygen from a joint part, and a manufacturing method thereof.SOLUTION: An electronic device 10 includes a base material 11, and, on the base material, an electronic element body 13, an electrode 14 connected to the electronic element body, a silicon-containing film 23 covering at least the electrode, and a seal base material 12 joined to the base material through a joint part 16 provided at a periphery of the electronic element body, and having a silicon-containing film to seal the electronic element body. At least one of the base material and sealing base material is gas-barrier film, and the silicon-containing film has a composition represented by chemical formula (1). In the formula, x, y and z are each an atomic ratio of oxygen, nitrogen or carbon to silicon, and satisfy 0≤y<0.3, 3<2x+5y≤5 and 0.01<z<1, or 0.3≤y<0.7, 3<2x+5y≤5 and 0≤z<1.SELECTED DRAWING: Figure 1 【課題】接合部からの水分や酸素の透過が低減され、安定性に優れる電子デバイスおよびその製造方法を提供する。【解決手段】基材１１と、基材上に、電子素子本体１３と、電子素子本体と接続された電極１４と、少なくとも電極を被覆するケイ素含有膜２３と、電子素子本体の周囲に設けられたケイ素含有膜を有する接合部１６を介して基材と接合し、電子素子本体を封止する封止基材１２と、を含み、基材および封止基材の少なくとも一方はガスバリア性フィルムであり、ケイ素含有膜は、下記化学式（１）で表される組成を有する、電子デバイス１０。式中、ｘ、ｙ、ｚはそれぞれケイ素に対する酸素、窒素、炭素の原子比であり、０≦ｙ＜０．３、３＜２ｘ＋５ｙ≦５、０．０１＜ｚ＜１を満たすか、０．３≦ｙ＜０．７、３＜２ｘ＋５ｙ≦５、０≦ｚ＜１を満たす。【選択図】図１