VAPOR DEPOSITION DEVICE HAVING PRE-TREATMENT DEVICE USING PLASMA

• Main Authors: ASUKAMA TATSUO, KOMURA TERUHISA, MATSUI SHIGEKI
• Format: Patent
• Language: English; Japanese
• Published: 28.03.2019
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

To provide a film deposition device capable of stably forming a uniform thin film on a substrate surface.SOLUTION: A substrate roller type continuous vapor deposition film deposition device 1 comprises a plasma pre-treatment device serially provided, and a film deposition device. A substrate delivery chamber 12A, a pre-treatment chamber 12B, and a film deposition chamber 12C are formed in a chamber. A substrate S is wound around a plasma pre-treatment roller 20 and a film deposition roller 25 serially provided via guide rolls 14a-14d from a winding roller 13, and taken up by a take-up roller 15. In the pre-treatment chamber, plasma forming gas is supplied in a gap surrounded by the pre-treatment roller, a nozzle, and a magnet 21 as magnetic formation means to nozzles 22a, 22b. Power is supplied between electrodes arranged on the substrate surface side, so as to generate plasma P and form an active pre-treatment surface on the surface of the substrate S. Inorganic oxide is film-deposited on the pre-treatment face of the pre-treated substrate at high speed by physical vapor deposition and the like in a film deposition chamber 12C.SELECTED DRAWING: Figure 1 【課題】基材表面に均一な薄膜を安定して形成できる成膜装置を提供する。【解決手段】直列に併設されたプラズマ前処理装置、成膜装置からなる基材のローラ式連続蒸着膜成膜装置１において、チャンバ内に基材搬送室１２Ａ、前処理室１２Ｂ、成膜室１２Ｃが形成され、基材Ｓは巻き出しローラ１３から、ガイドロール１４ａ〜１４ｄを介して直列に併設されたプラズマ前処理ローラ２０及び成膜ローラ２５に巻きつけられ、巻き取りローラ１５で巻き取られる。前処理室では、ノズル２２ａ、２２ｂからプラズマ形成ガスを前処理ローラとノズルと磁気形成手段であるマグネット２１とで囲まれた空隙内に、基材Ｓに向けて供給し、基材表面側に配置された電極間に電力が供給され、プラズマＰが発生し、基材Ｓの表面に活性のある前処理表面が形成される。その前処理した基材の前処理面に、成膜室１２Ｃで物理蒸着法等により無機酸化物を高速で成膜する。【選択図】図１