METHOD FOR GENERATING ARENE BORIDE
To provide an effective and position selective manufacturing method of arene boride without needs for an expensive ultra low temperature reaction condition.SOLUTION: In arene substituted by an electron attractive group (for example, 1-chloro-3-fluoro-2-substituted benzene), boronic acid or a boronic...
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Main Authors | , , , , , |
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Format | Patent |
Language | English Japanese |
Published |
28.03.2019
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Subjects | |
Online Access | Get full text |
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Summary: | To provide an effective and position selective manufacturing method of arene boride without needs for an expensive ultra low temperature reaction condition.SOLUTION: In arene substituted by an electron attractive group (for example, 1-chloro-3-fluoro-2-substituted benzene), boronic acid or a boronic acid derivative can be introduced at an ortho position to a fluoro substituent at good efficiency by certain kind of iridium chain catalyst system. X is selected from the electron attractive group or an orientation type methylation group.SELECTED DRAWING: None
【課題】高価な極低温反応条件を必要としない、効率的な、かつ位置選択的なホウ素化アレーンの調製方法の提供。【解決手段】電子吸引基により置換されているアレーン(例えば、1−クロロ−3−フルオロ−2−置換ベンゼン)において、ある種のイリジウム鎖触媒系によって、フルオロ置換基に対しオルト位で効率よくボロン酸またはボロン酸誘導体を導入することができる。(Xは、電子吸引基または指向型メタル化基から選択される。)【選択図】なし |
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Bibliography: | Application Number: JP20180210489 |