SUBSTRATE MANUFACTURING METHOD

• Main Authors: TANAKA ATSUYUKI, KAWAGUCHI DAISUKE
• Format: Patent
• Language: English; Japanese
• Published: 22.03.2019
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CLADDING OR PLATING BY SOLDERING OR WELDING; CRYSTAL GROWTH; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR; METALLURGY; PERFORMING OPERATIONS; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; SOLDERING OR UNSOLDERING; TRANSPORTING; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; WELDING; WORKING BY LASER BEAM; WORKING CEMENT, CLAY, OR STONE; WORKING STONE OR STONE-LIKE MATERIALS

To provide a technology relating to a substrate manufacturing method.SOLUTION: A substrate manufacturing method includes: an irradiation step of irradiating inside of an ingot of a gallium nitride (GaN) with a laser beam from a direction substantially perpendicular to a surface of the ingot to form a modified layer precipitated with gallium and substantially parallel to the surface of the ingot; and a separation step of separating the ingot mutually from each other in a position where the modified layer is formed as a boundary by melting the modified layer.SELECTED DRAWING: Figure 1 【課題】基板製造方法に関する技術を提供すること。【解決手段】基板製造方法は、窒化ガリウム（ＧａＮ）のインゴットの表面に略垂直な方向からインゴットの内部にレーザ光を照射し、ガリウムが析出した改質層であってインゴット表面に略平行な改質層を形成する照射工程を備える。基板製造方法は、改質層を溶解することで、改質層が形成されていた位置を境界として、インゴットを互いに分離する分離工程を備える。【選択図】図１