INDIUM-DOPED SILICON WAFER AND SOLAR BATTERY CELL ARRANGED BY USE THEREOF

• Main Authors: MARTIN JEFFREY BINNS, STEPHAN HARINGER, VALENTINO MOSER, ROBERTO SCALA, ARMANDO GIANNATTASIO, LUIGI BONANNO, JESSE SAMSONOV APPEL
• Format: Patent
• Language: English; Japanese
• Published: 14.03.2019
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CRYSTAL GROWTH; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

To provide a solar battery cell fabricated from an indium-doped monocrystalline silicon wafer sliced off from an ingot grown by Czochralski method.SOLUTION: A solar battery cell comprises an indium-doped monocrystalline silicon wafer sliced off from an ingot grown by Czochralski method. The solar battery cell is at least 17% in the conversion efficiency of a spectral irradiance of solar light in a surface of the indium-doped monocrystalline silicon wafer under the condition of an absolute air mass of 1.5.SELECTED DRAWING: Figure 16 【課題】チョクラルスキー法により成長させたインゴットからスライスされたインジウムドープ単結晶シリコンウェハから作製された太陽電池セルを提供する。【解決手段】チョクラルスキー法により成長させたインゴットからスライスされたインジウムドープ単結晶シリコンウェハを含み、絶対的エアマス１．５の下での前記インジウムドープ単結晶シリコンウェハの表面における太陽光の分光放射照度の変換効率が、少なくとも１７％である太陽電池セルである。【選択図】図１６