SEMICONDUCTOR DEVICE

• Main Authors: SHIODA MICHIYA, FUKUZUMI YOSHIAKI, NAGANO HAJIME, NISHIMOTO TATSURO, FUJITA JUNYA, FUKUMOTO ATSUSHI
• Format: Patent
• Language: English; Japanese
• Published: 14.03.2019
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide a semiconductor device having stable electrical characteristics.SOLUTION: A semiconductor device comprises: a phosphorous-containing silicon layer; an embedded layer provided on the silicon layer; a laminate which is provided on the embedded layer and has a plurality of electrode layers laminated via insulators; semiconductor bodies which extend in the laminate and the embedded layer in a lamination direction of the laminate and have side wall parts located lateral to the embedded layer, respectively; and silicon films each provided between the embedded layer and the side wall pat of the semiconductor body and is composed chiefly of silicon and further contains at least either one of germanium or carbon.SELECTED DRAWING: Figure 3 【課題】安定した電気特性が得られる半導体装置を提供すること。【解決手段】半導体装置は、リンを含むシリコン層と、シリコン層上に設けられた埋め込み層と、埋め込み層上に設けられ、絶縁体を介して積層された複数の電極層を有する積層体と、積層体内および埋め込み層内を積層体の積層方向に延び、埋め込み層の側方に位置する側壁部を有する半導体ボディと、埋め込み層と半導体ボディの側壁部との間に設けられたシリコンを主成分として含むシリコン膜であって、さらにゲルマニウムおよび炭素の少なくともいずれか１つを含むシリコン膜とを備えている。【選択図】図３