SEMICONDUCTOR ELEMENT

• Main Authors: CHOI RAK JUN, PARK JIN SOO, SUNG YOUN JOON
• Format: Patent
• Language: English; Japanese
• Published: 07.03.2019
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide an ultraviolet light-emitting element of a flip-chip type, and a semiconductor light-emitting element of which a working voltage is improved, and an optical output is improved.SOLUTION: A semiconductor element includes: a light-emitting structure material including a first conductivity type semiconductor layer 121, an active layer, and a second conductivity type semiconductor layer 123; a first electrode 151 electrically connected to the first conductivity type semiconductor layer; a second electrode 161 electrically connected to the second conductivity type semiconductor layer; a first cover electrode 152 arranged onto the first electrode; and an insulation layer arranged between the first electrode and the second electrode. The insulation layer includes: a first insulation part 171 arranged between the first conductivity type semiconductor layer and the first cover electrode; and a second insulation part 172 arranged onto an upper surface of the first cover electrode. The first cover electrode includes a first projection part inserted into between an upper surface of the first insulation part and a lower surface of the second insulation part.SELECTED DRAWING: Figure 1 【課題】フリップチップタイプの紫外線発光素子、動作電圧が改善された半導体発光素子、光出力が向上した半導体発光素子を提供する。【解決手段】第１導電型半導体層１２１、活性層および第２導電型半導体層１２３を含む発光構造物、前記第１導電型半導体層と電気的に連結される第１電極１５１、前記第２導電型半導体層と電気的に連結される第２電極１６１、前記第１電極上に配置される第１カバー電極１５２、および第１電極と前記第２電極との間に配置される絶縁層を含み、前記絶縁層は第１導電型半導体層と前記第１カバー電極との間に配置される第１絶縁部１７１、および第１カバー電極の上面に配置される第２絶縁部１７２を含み、第１カバー電極は前記第１絶縁部の上面および前記第２絶縁部の下面の間に挿入される第１突出部を含む。【選択図】図１