SUBSTRATE PROCESSING METHOD, STORAGE MEDIUM, AND SUBSTRATE PROCESSING SYSTEM

• Main Authors: TSUKANO KENTO, GOSHI GENTARO, KIYOSE HIROMI, FUKUI SHOGO, MASUZUMI TAKURO
• Format: Patent
• Language: English; Japanese
• Published: 28.02.2019
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide a substrate processing method capable of improving the accuracy of the thickness of a liquid film of a processing liquid formed on the surface of a substrate.SOLUTION: In a substrate processing method according to the present invention, first, as a liquid film forming step, a processing liquid is supplied to the surface of a substrate W while rotating the substrate W by a first rotation number to form a liquid film of the processing liquid that covers the surface of the substrate W. After the liquid film forming step, as a supply stop step, the number of rotations of the substrate W is set to the first rotation number or less, and supply of the processing liquid to the substrate W is stopped. After the supply stop step, as a liquid amount adjusting step, the number of rotations of the substrate W is set to be larger than the first rotation number to reduce the amount of the processing liquid forming the liquid film.SELECTED DRAWING: Figure 8 【課題】基板の表面上に形成される処理液の液膜の厚さの精度を向上させることができる基板処理方法を提供する。【解決手段】本発明による基板処理方法においては、まず、液膜形成工程として、基板Ｗを第１回転数で回転させながら基板Ｗの表面に処理液を供給して、基板Ｗの表面を覆う処理液の液膜を形成する。液膜形成工程の後、供給停止工程として、基板Ｗの回転数を第１回転数以下の回転数にするとともに、基板Ｗへの処理液の供給を停止する。供給停止工程の後、液量調整工程として、基板Ｗの回転数を第１回転数よりも大きい回転数にして、液膜を形成する処理液の液量を低減させる。【選択図】図８