SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING THE SAME, AND IMAGING DEVICE

• Main Authors: SHINOHARA MASATO, IKEDA HAJIME, KAWABATA KAZUNARI
• Format: Patent
• Language: English; Japanese
• Published: 21.02.2019
• Subjects: ACCESSORIES THEREFOR; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USINGWAVES OTHER THAN OPTICAL WAVES; APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FORPROJECTING OR VIEWING THEM; BASIC ELECTRIC ELEMENTS; CINEMATOGRAPHY; ELECTRIC COMMUNICATION TECHNIQUE; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROGRAPHY; HOLOGRAPHY; OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS; OPTICS; PHOTOGRAPHY; PHYSICS; PICTORIAL COMMUNICATION, e.g. TELEVISION; SEMICONDUCTOR DEVICES

To improve wavelength dependency in performance of separating a signal between a plurality of photoelectric conversion units.SOLUTION: In a solid-state imaging device, an impurity concentration has a first peak including a minimum value in a depth direction of a semiconductor substrate, in an isolation region arranged between adjacent photoelectric conversion units. The impurity concentration has a second peak including a maximum value in the depth direction, in a charge storage region of the adjacent photoelectric conversion units. The region showing the first peak and the region showing the second peak have an overlapping part in a direction vertical to the depth direction.SELECTED DRAWING: Figure 4 【課題】 複数の光電変換部間での信号の分離性能における、波長依存性を改善する。【解決手段】 隣り合う光電変換部の間に配される分離領域において、半導体基板の深さ方向で、不純物の濃度は、極小値を含む第１ピークを有し、前記隣り合う光電変換部の電荷蓄積領域において、前記深さ方向で、不純物の濃度は、極大値を含む第２ピークを有し、前記第１ピークを示す領域と前記第２ピークを示す領域は、前記深さ方向と垂直な方向において重なる部分を有する固体撮像装置に関する。【選択図】 図４