PHOTODETECTOR AND MANUFACTURING METHOD THEREOF, IMAGING DEVICE, IMAGING SYSTEM
To realize a photodetector capable of independently setting desired detection wavelengths and escape energy barriers to achieve excellent device characteristics and S/N.SOLUTION: A QWIP includes a barrier layer 11 containing InP, a quantum well layer 3 containing InGaAs and having a first region 12...
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| Format | Patent |
| Language | English Japanese |
| Published |
21.02.2019
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| Online Access | Get full text |
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| Abstract | To realize a photodetector capable of independently setting desired detection wavelengths and escape energy barriers to achieve excellent device characteristics and S/N.SOLUTION: A QWIP includes a barrier layer 11 containing InP, a quantum well layer 3 containing InGaAs and having a first region 12 and a second region 13 different in In composition in the thickness direction, and electrodes 6 and 7 for applying a voltage to the barrier layer 11 and the quantum well layer 3.SELECTED DRAWING: Figure 4
【課題】優れた素子特性及びＳ／Ｎを得るも、検知波長と脱出エネルギー障壁とを独立に所望に設定することができる光検出器を実現する。【解決手段】ＱＷＩＰは、ＩｎＰを含有する障壁層１１と、ＩｎＧａＡｓを含有しており、厚み方向でＩｎ組成が相異なる第１領域１２及び第２領域１３を有する量子井戸層３と、障壁層１１及び量子井戸層３に電圧を印加するための電極６，７とを備えている。【選択図】図４ |
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| AbstractList | To realize a photodetector capable of independently setting desired detection wavelengths and escape energy barriers to achieve excellent device characteristics and S/N.SOLUTION: A QWIP includes a barrier layer 11 containing InP, a quantum well layer 3 containing InGaAs and having a first region 12 and a second region 13 different in In composition in the thickness direction, and electrodes 6 and 7 for applying a voltage to the barrier layer 11 and the quantum well layer 3.SELECTED DRAWING: Figure 4
【課題】優れた素子特性及びＳ／Ｎを得るも、検知波長と脱出エネルギー障壁とを独立に所望に設定することができる光検出器を実現する。【解決手段】ＱＷＩＰは、ＩｎＰを含有する障壁層１１と、ＩｎＧａＡｓを含有しており、厚み方向でＩｎ組成が相異なる第１領域１２及び第２領域１３を有する量子井戸層３と、障壁層１１及び量子井戸層３に電圧を印加するための電極６，７とを備えている。【選択図】図４ |
| Author | YAMASHITA HIROYASU |
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| Discipline | Medicine Chemistry Sciences |
| DocumentTitleAlternate | 光検出器及びその製造方法、撮像素子、並びに撮像システム |
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| Snippet | To realize a photodetector capable of independently setting desired detection wavelengths and escape energy barriers to achieve excellent device... |
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| SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| Title | PHOTODETECTOR AND MANUFACTURING METHOD THEREOF, IMAGING DEVICE, IMAGING SYSTEM |
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