PHOTODETECTOR AND MANUFACTURING METHOD THEREOF, IMAGING DEVICE, IMAGING SYSTEM

To realize a photodetector capable of independently setting desired detection wavelengths and escape energy barriers to achieve excellent device characteristics and S/N.SOLUTION: A QWIP includes a barrier layer 11 containing InP, a quantum well layer 3 containing InGaAs and having a first region 12...

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Bibliographic Details
Main Author YAMASHITA HIROYASU
Format Patent
LanguageEnglish
Japanese
Published 21.02.2019
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:To realize a photodetector capable of independently setting desired detection wavelengths and escape energy barriers to achieve excellent device characteristics and S/N.SOLUTION: A QWIP includes a barrier layer 11 containing InP, a quantum well layer 3 containing InGaAs and having a first region 12 and a second region 13 different in In composition in the thickness direction, and electrodes 6 and 7 for applying a voltage to the barrier layer 11 and the quantum well layer 3.SELECTED DRAWING: Figure 4 【課題】優れた素子特性及びＳ／Ｎを得るも、検知波長と脱出エネルギー障壁とを独立に所望に設定することができる光検出器を実現する。【解決手段】ＱＷＩＰは、ＩｎＰを含有する障壁層１１と、ＩｎＧａＡｓを含有しており、厚み方向でＩｎ組成が相異なる第１領域１２及び第２領域１３を有する量子井戸層３と、障壁層１１及び量子井戸層３に電圧を印加するための電極６，７とを備えている。【選択図】図４
Bibliography:Application Number: JP20170144571