MAGNETIC ELEMENT, MAGNETIC STORAGE DEVICE AND SENSOR

To provide a magnetic element, a magnetic storage device, and a sensor, capable of improving an MR ratio.SOLUTION: The magnetic element includes a first magnetic layer, a second magnetic layer and an intermediate layer. The first magnetic layer contains Co, Fe, Mn, and Si and has a Heusler structure...

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Bibliographic Details
Main Authors BAINSLA LAKHAN, SUZUKI KAZUYA, MIZUKAMI NARUMI
Format Patent
LanguageEnglish
Japanese
Published 07.02.2019
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:To provide a magnetic element, a magnetic storage device, and a sensor, capable of improving an MR ratio.SOLUTION: The magnetic element includes a first magnetic layer, a second magnetic layer and an intermediate layer. The first magnetic layer contains Co, Fe, Mn, and Si and has a Heusler structure. The intermediate layer is provided between the first magnetic layer and the second magnetic layer.SELECTED DRAWING: Figure 1 【課題】ＭＲ比を向上できる磁気素子、磁気記憶装置及びセンサを提供する。【解決手段】実施形態によれば、磁気素子は、第１磁性層と、第２磁性層と、中間層と、を含む。前記第１磁性層は、Ｃｏ、Ｆｅ、Ｍｎ及びＳｉを含み、ホイスラー構造を有する。前記中間層は、前記第１磁性層と前記第２磁性層との間に設けられる。【選択図】図１
Bibliography:Application Number: JP20170136572