PHOTOELECTRIC CONVERSION DEVICE, EQUIPMENT HAVING THE SAME, AND METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE

• Main Authors: SEMORI MITSUHIRO, KODAIRA SHINJI, OKABE TAKESHI, IWATA JUN, SHOYAMA TOSHIHIRO, ENDO NOBUYUKI, TEZUKA TOMOYUKI
• Format: Patent
• Language: English; Japanese
• Published: 07.02.2019
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC COMMUNICATION TECHNIQUE; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; PICTORIAL COMMUNICATION, e.g. TELEVISION; SEMICONDUCTOR DEVICES

To provide a photoelectric conversion device enhanced in its performance and reliability.SOLUTION: A photoelectric conversion device comprises: a semiconductor substrate having a photoelectric conversion part; a metal-containing part provided over a semiconductor substrate so as not to overlap with at least part of the photoelectric conversion part; an interlayer insulation film disposed over the semiconductor substrate so as to cover the metal-containing part; a first silicon nitride layer disposed over the photoelectric conversion part so as to have a portion located between the interlayer insulation film and the semiconductor substrate; a silicon oxide film having a portion disposed between the first silicon nitride layer and the photoelectric conversion part, and a portion disposed between the interlayer insulation film and the metal-containing part; a second silicon nitride layer disposed between the silicon oxide film and the metal-containing part; a contact plug in contact with the metal-containing part, extending through the interlayer insulation film, the silicon oxide film, and the second silicon nitride layer; and a contact plug in contact with the semiconductor substrate, extending through the interlayer insulation film and the silicon oxide film.SELECTED DRAWING: Figure 3 【課題】 性能と信頼性を向上した光電変換装置を提供する。【解決手段】 光電変換部を有する半導体基板と、光電変換部の少なくとも一部に重ならないように半導体基板の上に設けられた金属含有部と、金属含有部を覆うように半導体基板の上に配された層間絶縁膜と、層間絶縁膜と半導体基板との間に位置する部分を有するように光電変換部の上に配された第１窒化シリコン層と、第１窒化シリコン層と光電変換部との間に配された部分、および、層間絶縁膜と金属含有部との間に配された部分を有する酸化シリコン膜と、酸化シリコン膜と金属含有部との間に配された第２窒化シリコン層と、層間絶縁膜、酸化シリコン膜および第２窒化シリコン層を貫通し、金属含有部に接触するコンタクトプラグと、層間絶縁膜および酸化シリコン膜を貫通し、半導体基板に接触するコンタクトプラグと、を備える。【選択図】 図３