RESIST UNDERLAYER FILM-FORMING COMPOSITION FOR SEMICONDUCTOR, RESIST UNDERLAYER FILM, METHOD FOR FORMING RESIST UNDERLAYER FILM, AND METHOD FOR MANUFACTURING PATTERNED SUBSTRATE
To provide a resist underlayer film-forming composition for a semiconductor, from which a resist underlayer film can be formed that has excellent flatness, filling property and solvent resistance as well as having excellent defect suppression property after etching, a resist underlayer film, a metho...
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Format | Patent |
Language | English Japanese |
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07.02.2019
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Abstract | To provide a resist underlayer film-forming composition for a semiconductor, from which a resist underlayer film can be formed that has excellent flatness, filling property and solvent resistance as well as having excellent defect suppression property after etching, a resist underlayer film, a method for forming a resist underlayer film, and a method for manufacturing a patterned substrate.SOLUTION: A resist underlayer film-forming composition for a semiconductor is provided, which is to be used to form a resist underlayer film deposited on a patterned substrate and which comprises a solvent and a compound having an aromatic ring. The solvent includes: a first solvent having a normal boiling point of lower than 156°C; and a second solvent having a normal boiling point of 156°C or higher and lower than 300°C. Preferably, the second solvent has a normal boiling point of 200°C or higher. The first solvent is preferably an alkylene glycol monoalkyl ether, an alkylene glycol monoalkyl ether acetate, or a combination of these.SELECTED DRAWING: None
【課題】平坦性、埋め込み性及び溶媒耐性に優れると共に、エッチング後の欠陥抑制性にも優れるレジスト下層膜を形成することができる半導体用レジスト下層膜形成組成物、レジスト下層膜、レジスト下層膜の形成方法並びにパターニング基板の製造方法の提供。【解決手段】パターンを有する基板上に積層されるレジスト下層膜を形成するための半導体用レジスト下層膜形成組成物であって、溶媒と、芳香環を有する化合物とを含有し、上記溶媒が、標準沸点が156℃未満である第1溶媒及び標準沸点が156℃以上300℃未満である第2溶媒を含むことを特徴とする。上記第2溶媒の標準沸点としては、200℃以上が好ましい。上記第1溶媒が、アルキレングリコールモノアルキルエーテル類、アルキレングリコールモノアルキルエーテルアセテート類又はこれらの組み合わせであるとよい。【選択図】なし |
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AbstractList | To provide a resist underlayer film-forming composition for a semiconductor, from which a resist underlayer film can be formed that has excellent flatness, filling property and solvent resistance as well as having excellent defect suppression property after etching, a resist underlayer film, a method for forming a resist underlayer film, and a method for manufacturing a patterned substrate.SOLUTION: A resist underlayer film-forming composition for a semiconductor is provided, which is to be used to form a resist underlayer film deposited on a patterned substrate and which comprises a solvent and a compound having an aromatic ring. The solvent includes: a first solvent having a normal boiling point of lower than 156°C; and a second solvent having a normal boiling point of 156°C or higher and lower than 300°C. Preferably, the second solvent has a normal boiling point of 200°C or higher. The first solvent is preferably an alkylene glycol monoalkyl ether, an alkylene glycol monoalkyl ether acetate, or a combination of these.SELECTED DRAWING: None
【課題】平坦性、埋め込み性及び溶媒耐性に優れると共に、エッチング後の欠陥抑制性にも優れるレジスト下層膜を形成することができる半導体用レジスト下層膜形成組成物、レジスト下層膜、レジスト下層膜の形成方法並びにパターニング基板の製造方法の提供。【解決手段】パターンを有する基板上に積層されるレジスト下層膜を形成するための半導体用レジスト下層膜形成組成物であって、溶媒と、芳香環を有する化合物とを含有し、上記溶媒が、標準沸点が156℃未満である第1溶媒及び標準沸点が156℃以上300℃未満である第2溶媒を含むことを特徴とする。上記第2溶媒の標準沸点としては、200℃以上が好ましい。上記第1溶媒が、アルキレングリコールモノアルキルエーテル類、アルキレングリコールモノアルキルエーテルアセテート類又はこれらの組み合わせであるとよい。【選択図】なし |
Author | MIYAKE MASAYUKI ABE TSUBASA SAKAI KAZUNORI TAKANASHI KAZUNORI WAKAMATSU TAKASHI |
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DocumentTitleAlternate | 半導体用レジスト下層膜形成組成物、レジスト下層膜、レジスト下層膜の形成方法及びパターニング基板の製造方法 |
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Snippet | To provide a resist underlayer film-forming composition for a semiconductor, from which a resist underlayer film can be formed that has excellent flatness,... |
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SubjectTerms | APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS |
Title | RESIST UNDERLAYER FILM-FORMING COMPOSITION FOR SEMICONDUCTOR, RESIST UNDERLAYER FILM, METHOD FOR FORMING RESIST UNDERLAYER FILM, AND METHOD FOR MANUFACTURING PATTERNED SUBSTRATE |
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