RESIST UNDERLAYER FILM-FORMING COMPOSITION FOR SEMICONDUCTOR, RESIST UNDERLAYER FILM, METHOD FOR FORMING RESIST UNDERLAYER FILM, AND METHOD FOR MANUFACTURING PATTERNED SUBSTRATE

To provide a resist underlayer film-forming composition for a semiconductor, from which a resist underlayer film can be formed that has excellent flatness, filling property and solvent resistance as well as having excellent defect suppression property after etching, a resist underlayer film, a metho...

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Main Authors TAKANASHI KAZUNORI, ABE TSUBASA, WAKAMATSU TAKASHI, MIYAKE MASAYUKI, SAKAI KAZUNORI
Format Patent
LanguageEnglish
Japanese
Published 07.02.2019
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
CINEMATOGRAPHY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
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Summary:To provide a resist underlayer film-forming composition for a semiconductor, from which a resist underlayer film can be formed that has excellent flatness, filling property and solvent resistance as well as having excellent defect suppression property after etching, a resist underlayer film, a method for forming a resist underlayer film, and a method for manufacturing a patterned substrate.SOLUTION: A resist underlayer film-forming composition for a semiconductor is provided, which is to be used to form a resist underlayer film deposited on a patterned substrate and which comprises a solvent and a compound having an aromatic ring. The solvent includes: a first solvent having a normal boiling point of lower than 156°C; and a second solvent having a normal boiling point of 156°C or higher and lower than 300°C. Preferably, the second solvent has a normal boiling point of 200°C or higher. The first solvent is preferably an alkylene glycol monoalkyl ether, an alkylene glycol monoalkyl ether acetate, or a combination of these.SELECTED DRAWING: None 【課題】平坦性、埋め込み性及び溶媒耐性に優れると共に、エッチング後の欠陥抑制性にも優れるレジスト下層膜を形成することができる半導体用レジスト下層膜形成組成物、レジスト下層膜、レジスト下層膜の形成方法並びにパターニング基板の製造方法の提供。【解決手段】パターンを有する基板上に積層されるレジスト下層膜を形成するための半導体用レジスト下層膜形成組成物であって、溶媒と、芳香環を有する化合物とを含有し、上記溶媒が、標準沸点が１５６℃未満である第１溶媒及び標準沸点が１５６℃以上３００℃未満である第２溶媒を含むことを特徴とする。上記第２溶媒の標準沸点としては、２００℃以上が好ましい。上記第１溶媒が、アルキレングリコールモノアルキルエーテル類、アルキレングリコールモノアルキルエーテルアセテート類又はこれらの組み合わせであるとよい。【選択図】なし
Bibliography:Application Number: JP20170154055