POWER SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF POWER SEMICONDUCTOR DEVICE

• Main Authors: TANAKA SABURO, BETSUSHIBA NORIYUKI, KAJIWARA TAKANOBU
• Format: Patent
• Language: English; Japanese
• Published: 24.01.2019
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide a power semiconductor device and a manufacturing method of a power semiconductor device which can prevent peeling between an insulating layer and a molded resin, further secure a creepage distance, and enable downsizing.SOLUTION: A power semiconductor device includes an insulating layer 6 in which a metal frame is placed on the surface and an uneven portion 6a is formed in a region of the surface on which the metal frame is not placed, a power semiconductor element 2 disposed on the surface of the metal frame, and a molding resin 13 sealing the power semiconductor element 2 together with the uneven portion 6a of the insulating layer 6, thereby preventing separation between the insulating layer 6 and the molding resin 13.SELECTED DRAWING: Figure 2 【課題】絶縁層と成形樹脂との剥離を防止し、さらに沿面距離を確保して小型化が可能となる電力用半導体装置および電力用半導体装置の製造方法を提供することを目的とする。【解決手段】表面に金属フレームが載置され、金属フレームが載置されていない表面の領域にはには凹凸部６ａが形成された絶縁層６と、金属フレームの表面に配置されたパワー半導体素子２と、絶縁層６の凹凸部６ａとともにパワー半導体素子２を封止した成形樹脂１３とを備えたことで、絶縁層６と成形樹脂１３との剥離を防止する。【選択図】図２