TUNGSTEN PRECURSOR AND METHOD OF FORMING TUNGSTEN-CONTAINING LAYER USING THE SAME

• Main Authors: AOKI YUTARO, LIM JAE-SOON, YUN JI EUN, SHIRATORI TSUBASA, SAITO AKIO, LEE SO YOUNG
• Format: Patent
• Language: English; Japanese
• Published: 10.01.2019
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

To provide a tungsten precursor that is suitable for a deposition process and can prevent deterioration of semiconductor devices.SOLUTION: The tungsten precursor is represented by the formula in the figure.SELECTED DRAWING: Figure 1 【課題】蒸着工程に適合であり、半導体素子の劣化を防止することができるタングステン前駆体を提供する。【解決手段】下記式で表記されるタングステン前駆体とする。【選択図】図１