SEMICONDUCTOR DEVICE

• Main Author: TAKEMURA YASUHIKO
• Format: Patent
• Language: English; Japanese
• Published: 10.01.2019
• Subjects: BASIC ELECTRIC ELEMENTS; BASIC ELECTRONIC CIRCUITRY; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INFORMATION STORAGE; PHYSICS; PULSE TECHNIQUE; SEMICONDUCTOR DEVICES; STATIC STORES

To provide a storage device which does not require a complicated manufacturing process and which can reduce power consumption; and provide a signal processing circuit using the storage device.SOLUTION: A storage element using a phase conversion element such as an inverter and a clocked inverter, which outputs an input signal by inverting a phase of the input signal comprises: a capacitive element for retaining data; and a switching element for controlling storage and emission of charge in the capacitive element. For the switching element, a transistor which includes amorphous silicon, polysilicon, microcrystal silicon or a compound semiconductor such as an oxide semiconductor in a channel formation region, and has a channel length equal to or greater than ten times larger the minimum processing line width or equal to or larger than 1 μm is used. The above described storage element is used for a storage device such as a register and a cash memory included in a signal processing circuit.SELECTED DRAWING: Figure 7 【課題】複雑な作製工程を必要とせず、消費電力を抑えることができる記憶装置、当該記憶装置を用いた信号処理回路を提供する。【解決手段】インバータまたはクロックドインバータなどの、入力された信号の位相を反転させて出力する位相反転素子を用いた記憶素子内に、データを保持するための容量素子と、当該容量素子における電荷の蓄積および放出を制御するスイッチング素子とを設ける。上記スイッチング素子には、アモルファスシリコン、ポリシリコン、微結晶シリコン、あるいは酸化物半導体等の化合物半導体をチャネル形成領域に含み、そのチャネル長が最小加工線幅の１０倍以上あるいは、１μｍ以上であるトランジスタを用いる。上記記憶素子を、信号処理回路が有する、レジスタやキャッシュメモリなどの記憶装置に用いる。【選択図】図７