SUBSTRATE PROCESSING DEVICE AND SUBSTRATE PROCESSING METHOD

• Main Authors: FURUKAWA MASAAKI, NISHIDA TAKAYUKI, TSUDA SHOTARO
• Format: Patent
• Language: English; Japanese
• Published: 20.12.2018
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide a substrate processing device and a substrate processing method which can improve effect of suppressing an intrusion of processing liquid into a lower surface of a substrate.SOLUTION: A second gas discharge part 81 is provided closer to a shaft line P1 than six support pins 13 erected around the shaft line P1 and at an outer periphery side of a substrate W, in a planar view of the substrate W held by a spin chuck 2. In addition to discharge of gas by a first gas discharge part 65, the second gas discharge part 81 discharges gas to the vicinities of parts at which the six support pins 13 respectively contact an end of the substrate W. More precisely, the second gas discharge part 81 discharges gas to parts, into which processing liquid is predicted to intrude because of deterioration in effect of suppressing the intrusion, at which the support pins 13 contact the end of the substrate W, from the vicinities of the support pins 13. Therefore, by reinforcing flowing of gas discharged by the first gas discharge part 65 at a pin point, the effect of suppressing the intrusion of the processing liquid into the lower surface of the substrate W can be improved.SELECTED DRAWING: Figure 3 【課題】基板の下面への処理液の回り込み抑制効果を改善できる基板処理装置および基板処理方法を提供する。【解決手段】第２気体吐出部８１は、スピンチャック２で保持された基板Ｗを平面視した際に、軸線Ｐ１周りに立設された６本の支持ピン１３よりも軸線Ｐ１側でかつ、基板Ｗの外周側に設けられている。第２気体吐出部８１は、第１気体吐出部６５による気体の吐出に加えて、６本の支持ピン１３の各々と基板Ｗの端との接触部分付近に気体を吐出する。すなわち、第２気体吐出部８１は、回り込み抑制効果が低下し、基板Ｗの下面に処理液が回り込むと考えられる支持ピン１３と基板Ｗの端との接触部分付近に、支持ピン１３の近くから気体を吐出する。そのため、第１気体吐出部６５による気体の流れをピンポイントに強化することで、基板Ｗの下面への処理液の回り込み抑制効果を改善できる。【選択図】図３