ALUMINUM NITRIDE SINGLE CRYSTAL MANUFACTURING DEVICE

• Main Authors: NAKAMURA KEIICHIRO, IWASAKI YOSUKE
• Format: Patent
• Language: English; Japanese
• Published: 13.12.2018
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

To provide an aluminum nitride single crystal manufacturing device capable of preferentially growing seed crystals and efficiently growing single crystals by preventing sublimated raw materials from being accumulated at a portion other than the seed crystals.SOLUTION: In this device, aluminum nitride single crystals are manufactured by a sublimation method. A raising crucible 1 comprises a crucible main body 3 opened at a top and housing a raw material at a bottom, and a cover body 4 holding seed crystals at a lower face center part and set to the crucible main body 3 to block the opened top. The cover body 4 has a thin part 40 at a center region. The thin part 40 has a high heat extraction effect, and therefore, the seed crystals and its periphery (a portion of the cover body) are made to have a temperature distribution such that the temperature of seed crystals is smaller than that of the seed crystal periphery. Thus, the sublimated raw material are prevented from being accumulated to the seed crystal periphery, and can be preferentially crystal-grown on the seed crystals.SELECTED DRAWING: Figure 1 【課題】昇華した原料物質が種結晶以外の部位に堆積することを防止し、種結晶上で優先的に結晶成長させ、単結晶を効率よく成長させることができる窒化アルミニウム単結晶の製造装置を提供する。【解決手段】昇華法により窒化アルミニウム単結晶を製造する装置であって、育成坩堝１は、上部が開放し、下部に原料物質が収容される坩堝本体３と、下面中央部に種結晶を保持し、坩堝本体３に対してその開放した上部を塞ぐようにセットされる蓋体４を備え、この蓋体４は、その中央領域に薄肉部４０を有する。薄肉部４０は抜熱効果が高いため、種結晶及びその周囲（蓋体の部位）を種結晶＜種結晶周囲となるような温度分布とすることができるので、昇華した原料物質の種結晶周囲への堆積を防止し、種結晶上で優先的に結晶成長させることができる。【選択図】図１