ATOMIC LAYER ETCHING, REACTIVE PRECURSORS AND ENERGETIC SOURCES FOR PATTERNING APPLICATIONS

• Main Authors: PULKIT AGARWAL, PURUSHOTTAM KUMAR, ADRIEN LAVOIE
• Format: Patent
• Language: English; Japanese
• Published: 22.11.2018
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide methods and apparatuses for patterning a carbon-containing material over a layer to be etched.SOLUTION: Methods comprise the step of trimming a carbon-containing material by atomic layer etching. The atom layer etching includes the steps of: exposing the carbon-containing material to an oxygen-containing gas without a plasma to modify a surface of the carbon-containing material; and exposing the carbon-containing material to an inert gas and igniting a plasma to remove the modified surface of the carbon-containing material. The methods further comprise the step of depositing a conformal film over a carbon-containing material patterned by atomic layer etching without breaking vacuum. The oxygen-containing gas may be one containing any one or more of oxygen, ozone, water vapor, nitrous oxide, carbon monoxide, formic acid vapor and/or carbon dioxide. The apparatus may include 27 and/or 13 MHz capacitively coupled plasmas, and/or inductively coupled plasmas such as remote plasmas.SELECTED DRAWING: Figure 3 【課題】エッチング対象の層の上に炭素含有材料をパターニングするための方法及び装置を提供する。【解決手段】原子層エッチングによって炭素含有材料をトリミングすることを伴う。原子層エッチングは、炭素含有材料の表面を改質するために、プラズマを伴うことなく炭素含有材料を酸素含有ガスに暴露し、炭素含有材料の改質表面を除去するために、炭素含有材料を不活性ガスに暴露し、プラズマを着火することを含む。また、原子層エッチングを使用してパターニングされた炭素含有材料の上に、真空を破ることなく共形膜を堆積させることも含む。酸素含有ガスは、酸素、オゾン、水蒸気、亜酸化窒素、一酸化炭素、ギ酸蒸気、及び／又は二酸化炭素のうちの任意の１種類以上を含有したものであってよい。装置は、２７ＭＨｚ及び／若しくは１３ＭＨｚの容量結合プラズマ、並びに／又は例えば遠隔プラズマなどの誘導結合プラズマを含んでいてよい。【選択図】図３