SURFACE TREATMENT DEVICE AND SURFACE TREATMENT METHOD

• Main Authors: TONAI SHUNPEI, OBARA TOSHIKI, KANASUGI KAZUYA
• Format: Patent
• Language: English; Japanese
• Published: 22.11.2018
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PROBLEM TO BE SOLVED: To provide a surface treatment device and a surface treatment method capable of improving surface treatment speed, by reducing loss amount due to adhesion of active species or deposition species on the peripheral wall surface constituting an electrode, and by increasing supply amount of active species or deposition species for the treatment surface of a base material.SOLUTION: A surface treatment device for treating the surface of a base material includes: a vacuum vessel; exhaust means for depressing the vacuum vessel, and maintaining that pressure; plasma generation means provided in the vacuum vessel, and generating plasma; a base material holding mechanism for holding a base material, and placed so that the treatment surface of the base material faces a plasma generation space where plasma is generated by the plasma generation means; and a peripheral wall surrounding the plasma generation space and the base material holding mechanism. In the peripheral wall, multiple first gas supply ports for blowing gas in oblique direction to the wall surface of the peripheral wall, toward a space surrounded by the peripheral wall, are formed.SELECTED DRAWING: Figure 1 【課題】電極を構成する周壁表面での活性種や成膜種の付着による損失量を低減し、基材の処理表面に対する活性種や成膜種の供給量を増加させ、表面処理速度の向上を可能とする、表面処理装置および表面処理方法を提供する。【解決手段】真空容器と、前記真空容器内を減圧し、その圧力を維持するための排気手段と、前記真空容器内に備えられ、プラズマを生成するためのプラズマ生成手段と、基材を保持するための基材保持機構であって、前記プラズマ生成手段によりプラズマが生成されるプラズマ生成空間に前記基材の処理面が対向するように配置された基材保持機構と、前記プラズマ生成空間および前記基材保持機構を囲む周壁と、を備え、前記周壁に、この周壁で囲まれた空間へ向けて、この周壁の壁面に対して斜め方向にガスを吹き出す複数の第１のガス供給口が形成された、基材の表面を処理する表面処理装置を提供する。【選択図】図１