FILM DEPOSITION APPARATUS AND FILM DEPOSITION METHOD

• Main Authors: HONMA HIROAKI, TAKAHASHI AKIHISA, HASEGAWA MASAKI, HASHIMOTO YUSUKE
• Format: Patent
• Language: English; Japanese
• Published: 22.11.2018
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PROBLEM TO BE SOLVED: To provide a film deposition apparatus having a space for forming a film on a substrate using a reactive sputtering method by a combination of a metal target and a reactive gas and being capable of a high speed film deposition.SOLUTION: The invention provides a film deposition apparatus including a space for forming a film on a substrate using a reactive sputtering method by a combination of a metal target and a reactive gas. In the space, the substrate and the metal target are arranged in a position facing each other at a predetermined distance, the metal target including an adjusting means of a magnetic strength applied to the metal target, the adjusting means being set at a magnetic strength [G] of 460 or more and 1000 or less.SELECTED DRAWING: Figure 1 【課題】金属製ターゲットと反応性ガスの組合せによる、反応性スパッタ法を用いて基板上に薄膜を形成する空間を備え、高速成膜を可能とする成膜装置を提供する。【解決手段】本発明は、金属ターゲットと反応性ガスの組合せにより、反応性スパッタ法を用いて基板上に薄膜を形成する空間を備えた成膜装置であって、前記空間内において、前記基板と前記金属ターゲットとは所定の距離をもって、互いに対向する位置に配置されており、前記金属ターゲットに印加する磁場強度の調整手段を備え、該調整手段は、該磁場強度［Ｇ］を４６０以上１０００以下の範囲に設定する。【選択図】図１