METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

• Main Authors: MINAMITAKE HARUHIKO, KAWASE YUSUKE, KANADA KAZUNORI
• Format: Patent
• Language: English; Japanese
• Published: 15.11.2018
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device capable of locally heating a semiconductor substrate without adjusting an irradiation range of an electromagnetic wave even after a semiconductor element is formed.SOLUTION: A semiconductor element 4 including wiring or an electrode is formed in a first region 2 of a semiconductor substrate 1. A reflective film 5, covering the first region 2 and the semiconductor element 4, and not covering a second region 3 of the semiconductor substrate 1, is formed. After the reflection film 5 is formed, the first and second regions 2, 3 of the semiconductor substrate 1 are irradiated with an electromagnetic wave 6. The electromagnetic wave 6 is reflected by the reflecting film 5.SELECTED DRAWING: Figure 1 【課題】半導体素子を形成した後でも電磁波の照射範囲を調整せずに半導体基板を局所的に加熱することができる半導体装置の製造方法を得る。【解決手段】半導体基板１の第１の領域２に配線又は電極を含む半導体素子４を形成する。第１の領域２及び半導体素子４を覆いつつ半導体基板１の第２の領域３を覆わない反射膜５を形成する。反射膜５を形成した後に半導体基板１の第１及び第２の領域２，３に電磁波６を照射する。電磁波６は反射膜５により反射される。【選択図】図１