METHOD FOR EVALUATING STRAIN OF HEXAGONAL COMPOUND SEMICONDUCTOR

• Main Authors: NISHIGUCHI TARO, KAWASE TOMOHIRO, FUKUZAWA TOSHIYUKI
• Format: Patent
• Language: English; Japanese
• Published: 01.11.2018
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES; MEASURING; METALLURGY; PHYSICS; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; TESTING; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

To provide a method for evaluating the strain of a hexagonal compound semiconductor, capable of accurately evaluating strain.SOLUTION: A method for evaluating the strain of a hexagonal compound semiconductor comprises: a step (S10) of preparing a hexagonal compound semiconductor substrate; a step of transmitting light through the substrate; and a step of calculating a phase difference. In the step (S10) of preparing the substrate, prepared is the hexagonal compound semiconductor substrate having a hexagonal crystal structure, having birefringence and having a first main surface, a second main surface on the side opposite to the first main surface and a side surface. In the step of transmitting the light through the substrate, the first main surface is irradiated with the light transmitted through the substrate and the light is transmitted through the substrate in the direction in the substrate. In the step of calculating the phase difference, the phase difference caused by birefringence is calculated.SELECTED DRAWING: Figure 1 【課題】歪を正確に評価することが可能な六方晶化合物半導体の歪評価方法を提供する。【解決手段】六方晶化合物半導体の歪評価方法は、六方晶化合物半導体の基板を準備する工程（Ｓ１０）と、基板に光を透過させる工程と、位相差を算出する工程とを備える。基板を準備する工程（Ｓ１０）では、六方晶の結晶構造を備え、複屈折を有し、第１主面と当該第１主面と反対側の第２主面と側面とを含む六方晶化合物半導体の基板を準備する。基板に光を透過させる工程では、第１主面に基板を透過する光を照射し、基板中の＜０００１＞方向に沿って基板に光を透過させる。位相差を算出する工程では、複屈折により生じる位相差を算出する。【選択図】図１