APPARATUS FOR PRODUCING TITANIUM TETRACHLORIDE AND METHOD FOR PRODUCING TITANIUM TETRACHLORIDE USING THE SAME

• Main Authors: NAKAMURA MASAHIRO, HASHIZUME TORU, ARAI FUMITO, TANAKA KATSUMI
• Format: Patent
• Language: English; Japanese
• Published: 01.11.2018
• Subjects: BLASTING; CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOIDCHEMISTRY; CHEMISTRY; COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F; FURNACES; FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; HEATING; INORGANIC CHEMISTRY; KILNS; LIGHTING; MECHANICAL ENGINEERING; METALLURGY; OPEN SINTERING OR LIKE APPARATUS; OVENS; PERFORMING OPERATIONS; PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL; RETORTS; THEIR RELEVANT APPARATUS; TRANSPORTING; WEAPONS

To provide an apparatus for producing titanium tetrachloride that is capable of preventing corrosion of a bottom plate constituting a dispersion plate of the apparatus for producing titanium tetrachloride to thereby prolong apparatus operation time, and a method for producing titanium tetrachloride using the apparatus.SOLUTION: There is provided an apparatus for producing titanium tetrachloride including a chlorination reaction furnace from the lower part of which a chlorine gas is supplied to form a fluidized layer, the apparatus comprising a bottom plate 6, a heat insulating layer 7 that is disposed above the bottom plate 6, is formed from heat-resistant chlorine-resistant inert particles and has a thickness of 300 mm or greater, a block layer 8 that is disposed above the heat insulating layer 7, is formed from a heat-resistant chlorine-resistant block and has a thickness of 100 mm or greater, and a gas feeding pipe 9 for feeding chlorine to a region ranging from a part below the bottom plate and to a part above the block layer. The inert particles constituting the heat insulating layer 7 have a density of 2.0 to 4.0 g/cm, and the block constituting the block layer 8 has a density of 2.0 to 3.3 g/cm. The gas feeding pipe 9 is preferably formed from silicon nitride.SELECTED DRAWING: Figure 3 【課題】四塩化チタンの製造装置の分散盤を構成する底板の腐蝕を防止し、装置稼働時間を延長ができる四塩化チタン製造装置及び前記装置を用いた四塩化チタンの製造方法の提供。【解決手段】下部から塩素ガスを供給して流動層を形成する塩化反応炉であり、底板６と、底板６の上面に耐熱耐塩素性の不活性粒子からなる厚さ３００ｍｍ以上の断熱層７、更に断熱層７の上面に耐熱耐塩素性のブロックから構成される厚さ１００ｍｍ以上のブロック層８を配置し、底板の下からブロック層の上まで塩素を供給できるガス供給配管９を配置する四塩化チタン製造装置。断熱層７を構成する不活性粒子の密度が２．０〜４．０ｇ／ｃｍ３であり、ブロック層８を構成するブロックの密度が２．０〜３．３ｇ／ｃｍ３であり、ガス供給管９が窒化珪素からなることが好ましい、四塩化チタンの製造装置。【選択図】図３