SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a semiconductor device that can suppress electric currents flowing through a semiconductor pillar from decreasing.SOLUTION: The semiconductor device comprises a semiconductor pillar and a control electrode. The semiconductor pillar includes a first region and a secon...

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Bibliographic Details
Main Authors ODA MINORU, NODA KOTARO, MOMO NOBUYUKI, YOTSUMOTO SATOSHI
Format Patent
LanguageEnglish
Japanese
Published 18.10.2018
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Summary:PROBLEM TO BE SOLVED: To provide a semiconductor device that can suppress electric currents flowing through a semiconductor pillar from decreasing.SOLUTION: The semiconductor device comprises a semiconductor pillar and a control electrode. The semiconductor pillar includes a first region and a second region provided along a first direction and an intermediate region positioned between the first region and the second region, which extends in the first direction. The control electrode is arranged at a position confronting the intermediate region through an insulation film. The semiconductor pillar is provided so that a minimum width of the intermediate region in a second direction orthogonal to the first direction is narrower than a first width of the first region in the second direction and a second width of the second region in the second direction.SELECTED DRAWING: Figure 1 【課題】実施形態は、半導体ピラー中を流れる電流の低下を抑制できる半導体装置を提供する。【解決手段】半導体装置は、半導体ピラーと、制御電極と、を備える。前記半導体ピラーは、第1方向に沿って設けられた、第1領域と、第2領域と、前記第1領域と前記第2領域との間に位置する中間領域と、を含み、前記第1方向に延在する。前記制御電極は、前記中間領域に向き合う位置に絶縁膜を介して配置される。前記半導体ピラーは、前記第1方向に直交する第2方向における前記中間領域の最小幅が、前記第2方向における前記第1領域の第1幅、および、前記第2方向における前記第2領域の第2幅よりも狭くなるように設けられる。【選択図】図1
Bibliography:Application Number: JP20170061468