SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURING THE SAME

• Main Author: HAGISHIMA DAISUKE
• Format: Patent
• Language: English; Japanese
• Published: 18.10.2018
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a semiconductor storage device having a high operation speed, and to provide a method of manufacturing the same.SOLUTION: A semiconductor storage device comprises: a first electrode film; a second electrode film group provided on the first electrode film and consisting of a plurality of electrode films; a third electrode film group provided on the first electrode film so as to be separated from the second electrode film group and consisting of a plurality of electrode films; a semiconductor member extending in a first direction in which the first electrode film and the second electrode film group are arranged; a charge storage member provided between the first electrode film and the semiconductor member; a first conductive film that mutually connects the plurality of electrode films of the second electrode film group; and a second conductive film that mutually connects the plurality of electrode films of the third electrode film group.SELECTED DRAWING: Figure 1 【課題】動作速度が高い半導体記憶装置及びその製造方法を提供する。【解決手段】半導体記憶装置は、第１電極膜と、前記第１電極膜上に設けられた複数枚の電極膜からなる第２電極膜群と、前記第１電極膜上に前記第２電極膜群から離間して設けられた複数枚の電極膜からなる第３電極膜群と、前記第１電極膜及び前記第２電極膜群が配列した第１方向に延びる半導体部材と、前記第１電極膜と前記半導体部材との間に設けられた電荷蓄積部材と、前記第２電極膜群の前記複数枚の電極膜を相互に接続する第１導電膜と、前記第３電極膜群の前記複数枚の電極膜を相互に接続する第２導電膜と、を備える。【選択図】図１