MEMORY DEVICE AND CONTROL METHOD OF MEMORY DEVICE

• Main Authors: FUJINO YORINOBU, OSADA YOSHIAKI, HATSUDA KOSUKE
• Format: Patent
• Language: English; Japanese
• Published: 18.10.2018
• Subjects: INFORMATION STORAGE; PHYSICS; STATIC STORES

PROBLEM TO BE SOLVED: To provide a high-quality memory device.SOLUTION: A memory device includes a memory cell and a first circuit. The first circuit performs a first read for the memory cell and generates a first voltage; writes first data to the memory cell for which the first read has been performed; performs a second read for the memory cell to which the first data has been written, and generates a second voltage; generates a first current based on the first voltage; generates a second current based on the second voltage; and adds a third current to the first current or second current, to determine data which has been stored in the memory cell at the time of the first read.SELECTED DRAWING: Figure 6 【課題】高品質なメモリデバイスを提供する。【解決手段】メモリデバイスは、メモリセルと、メモリセルに対して第１読み出しを行い、第１電圧を生成し、第１読み出しを行ったメモリセルに、第１データを書込み、第１データが書き込まれたメモリセルに対して第２読み出しを行い、第２電圧を生成し、第１電圧に基づく第１電流を生成し、第２電圧に基づく第２電流を生成し、第１電流または第２電流に、第３電流を加えることで、第１読み出し時にメモリセルに記憶されていたデータを判定する第１回路と、を備える。【選択図】 図６