SYSTEM AND METHOD FOR FLOW-MONITORING IN PRECURSOR VAPOR SUPPLY SYSTEM OF SUBSTRATE PROCESSING SYSTEM

• Main Authors: KIM SUNG JE, PURUSHOTTAM KUMAR, ZHAI YOU, ADRIEN LAVOIE, QIAN JUN, JEREMIAH BALDWIN
• Format: Patent
• Language: English; Japanese
• Published: 18.10.2018
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PROBLEM TO BE SOLVED: To provide a method for exactly controlling the amount of precursor vapor transferred to a processing chamber.SOLUTION: A method for transferring precursor vapor using a vapor transferring system in a substrate processing system includes (a) selectively supplying a push gas to an inlet of an ampoule storing precursor liquid and precursor vapor during a deposition period of a substrate, (b) measuring the pressure of the push gas and the precursor vapor at an outlet of the ampoule during the deposition period, (c) determining a maximum pressure during the deposition period, (d) determining an integral area relating to the deposition period based on a sampling interval and the maximum pressure during the sample interval, and (e) repeating (a), (b), (c), and (d) for a plurality of deposition periods of the substrate.SELECTED DRAWING: Figure 10 【課題】処理チャンバへ配送される気化前駆体の量を正確に制御する方法の提供。【解決手段】蒸気配送システムを使用して基板処理システムにおいて気化前駆体を配送するための方法は、（ａ）基板の堆積期間中に、液体前駆体及び気化前駆体を貯蔵するアンプルの入口にプッシュガスを選択的に供給し、（ｂ）堆積期間中に、アンプルの出口においてプッシュガス及び気化前駆体の圧力を測定し、（ｃ）堆積期間中の最大圧力を決定し、（ｄ）サンプリング間隔及び該サンプリング間隔中の最大圧力に基づいて、堆積期間に関する積分面積を決定し、（ｅ）上記基板について、堆積期間のうちの複数の堆積期間に関して（ａ）、（ｂ）、（ｃ）及び（ｄ）を繰り返すことを含む。【選択図】図１０