SEMICONDUCTOR STORAGE DEVICE AND METHOD FOR MANUFACTURING THE SAME

• Main Author: YAMAMOTO KOICHI
• Format: Patent
• Language: English; Japanese
• Published: 11.10.2018
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a semiconductor storage device having high reliability, capable of forming a contact, and not causing penetration in a tiered portion of a laminate, and a method for manufacturing the same.SOLUTION: A semiconductor storage device according to an embodiment comprises a substrate, a laminate, a first insulating film, a second insulating film, and a plurality of contacts. The laminate is provided on the substrate, and includes a plurality of electrode films separately laminated to each other. An end part of the laminate has a tiered shape in which a terrace is formed in each of the plurality of electrode films. The first insulating film is provided on the end part. The second insulating film is provided on the first insulating film, and located along the end part. At least a part of the second insulating film sidlingly extends. The plurality of contacts extend in a lamination direction of the plurality of electrode films in the first and the second insulating film, and are located on the terraces of the plurality of electrode films.SELECTED DRAWING: Figure 1 【課題】積層体の階段状の部分に、突き抜けが発生なく信頼性高くコンタクトを形成可能な半導体装置及びその製造方法を提供する。【解決手段】実施形態に係る半導体装置は、基板と、積層体と、第１絶縁膜と、第２絶縁膜と、複数のコンタクトと、を備える。前記積層体は、前記基板上に設けられ、それぞれ離れて積層された複数の電極膜を有する。前記積層体の端部の形状は、前記複数の電極膜のそれぞれにテラスが形成された階段状である。前記第１絶縁膜は、前記端部上に設けられる。前記第２絶縁膜は、前記第１絶縁膜上に設けられ、前記端部に沿って位置する。前記第２絶縁膜の少なくとも一部が傾斜して延びている。前記複数のコンタクトは、前記第１絶縁膜及び前記第２絶縁膜内を前記複数の電極膜の積層方向に延び、前記複数の電極膜のテラス上に位置する。【選択図】図１