IMAGING ELEMENT AND ELECTRONIC EQUIPMENT

• Main Authors: KUMAGAI YOSHIMICHI, ABE TAKASHI, YOSHITA RYOTO
• Format: Patent
• Language: English; Japanese
• Published: 11.10.2018
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC COMMUNICATION TECHNIQUE; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; PICTORIAL COMMUNICATION, e.g. TELEVISION; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To obtain a better pixel signal.SOLUTION: An imaging element comprises: a photoelectric conversion unit that converts received light into electric charges; a holding unit that holds the electric charges transferred from the photoelectric conversion unit; and a light shielding unit provided between the photoelectric conversion unit and the holding unit and that blocks light. The photoelectric conversion unit, the holding unit, and the light shielding unit are formed in a semiconductor substrate having a predetermined thickness. The light shielding unit in a transfer region for transferring the electric charges from the photoelectric conversion unit to the holding unit is formed as a non-penetration light shielding unit not penetrating through the semiconductor substrate. The light shielding unit in a region other than the transfer region is formed as a penetration light shielding unit that penetrates through the semiconductor substrate. This technology can be applied to the imaging element.SELECTED DRAWING: Figure 4 【課題】より良好な画素信号を得ることができるようにする。【解決手段】受光した光を電荷に変換する光電変換部と、光電変換部から転送されてきた電荷を保持する保持部と光電変換部と保持部との間に、光を遮光する遮光部とを備え、光電変換部、保持部、および遮光部は、所定の厚さを有する半導体基板内に形成され、光電変換部から保持部に電荷を転送する転送領域の遮光部は、半導体基板を貫通しない非貫通遮光部として形成され、転送領域以外の遮光部は、半導体基板を貫通する貫通遮光部として形成されている。本技術は、撮像素子に適用できる。【選択図】図４