SEMICONDUCTOR LIGHT-EMITTING DEVICE

• Main Author: NIHEI NORIKO
• Format: Patent
• Language: English; Japanese
• Published: 27.09.2018
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device operable to emit white light, which is small in color unevenness.SOLUTION: A semiconductor light-emitting device comprises: a support substrate; a light-emitting element which is put on the support substrate and includes an electrode layer including a conductive member, and an optical semiconductor laminate layer disposed on the electrode layer and having a light-emitting property; and a wavelength conversion layer which covers the optical semiconductor laminate layer of the semiconductor light-emitting element, and has a first portion located just above the optical semiconductor laminate layer and second portions which laterally run over the optical semiconductor laminate layer, and is sagging downward without touching a side of the semiconductor laminate layer, provided that the thickness of the second portion falls within a range of ±15% of the thickness of the first portion.SELECTED DRAWING: Figure 1 【課題】白色光を出射する、色ムラの少ない半導体発光装置を提供する。【解決手段】当該半導体発光装置は、支持基板と、前記支持基板上に載置され、導電部材を含む電極層、および、該電極層上に配置され、発光性を有する光半導体積層、を含む発光素子と、前記半導体発光素子の光半導体積層を覆う波長変換層であって、該光半導体積層の直上に位置する第１の部分と、該光半導体積層からはみ出し、該半導体積層の側部に接触せずに垂れ下がる第２の部分と、を有し、該第２の部分の厚みが該第１の部分の厚みの±１５％の範囲内に収まる波長変換層と、を備える。【選択図】 図１