CHEMICAL MECHANICAL PLANARIZATION OF FILMS COMPRISING ELEMENTAL SILICON

• Main Authors: JOSEPH ROSE, JAMES MATTHEW HENRY, TAMBOLI DNYANESH CHANDRAKANT, KRISHNA P MURELLA, ZHOU HONGJUN
• Format: Patent
• Language: English; Japanese
• Published: 27.09.2018
• Subjects: ADHESIVES; BASIC ELECTRIC ELEMENTS; CHEMISTRY; DRESSING OR CONDITIONING OF ABRADING SURFACES; DYES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS; GRINDING; MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE; METALLURGY; MISCELLANEOUS APPLICATIONS OF MATERIALS; MISCELLANEOUS COMPOSITIONS; NATURAL RESINS; PAINTS; PERFORMING OPERATIONS; POLISHES; POLISHING; POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH; SEMICONDUCTOR DEVICES; SKI WAXES; TRANSPORTING

PROBLEM TO BE SOLVED: To provide chemical mechanical planarization polishing compositions used in production of a semiconductor device, and polishing methods for carrying out chemical mechanical planarization.SOLUTION: Chemical Mechanical Planarization (CMP) polishing compositions comprise abrasive particles and additives to boost removal rates of films comprising elemental silicon such as poly-silicon and silicon-germanium.SELECTED DRAWING: None 【課題】半導体装置の製造に用いられる化学機械平坦化研磨組成物ならびに化学機械平坦化を実施するための研磨方法を提供する。【解決手段】研磨剤粒子および、元素状ケイ素を含む膜、例えばポリシリコンおよびシリコン−ゲルマニウム、の除去速度を増加させる添加剤を含む化学機械平坦化（ＣＭＰ）研磨組成物。【選択図】なし