FERROMAGNETIC TUNNEL JUNCTION DEVICE AND MANUFACTURING METHOD OF THE SAME

• Main Authors: HASE NAOKI, SATO AKIRA, HOSOMI MASAKATSU, HIGO YUTAKA, OMORI HIROYUKI, UCHIDA HIROYUKI
• Format: Patent
• Language: English; Japanese
• Published: 20.09.2018
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INDUCTANCES; MAGNETS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES; SEMICONDUCTOR DEVICES; TRANSFORMERS

PROBLEM TO BE SOLVED: To provide a ferromagnetic tunnel junction device capable of avoiding characteristic changes of elements and maintaining high manufacturing yield while avoiding an increase in an area occupied by elements and the number of manufacturing steps, and a method of manufacturing the same.SOLUTION: The ferromagnetic tunnel junction device includes: a first magnetic layer; a first insulating layer provided on the first magnetic layer; a second magnetic layer provided on the first insulating layer and containing a magnetic transition metal; and a magnesium oxide film containing the magnetic transition metal and provided so as to cover a side surface of the second magnetic layer.SELECTED DRAWING: Figure 4 【課題】素子の専有面積及び製造工程数の増加を避けつつ、素子の特性変化を避け、且つ、高い製造歩留まりを維持することが可能な強磁性トンネル接合素子及びその製造方法を提供する。【解決手段】第１の磁性層と、前記第１の磁性層の上に設けられた第１の絶縁層と、前記第１の絶縁層上に設けられた、磁性遷移金属を含む第２の磁性層と、前記第２の磁性層の側面を覆うように設けられた、前記磁性遷移金属を含む酸化マグネシウム膜と、を備える、強磁性トンネル接合素子を提供する。【選択図】図４