DEVICE AND METHOD FOR INCREASING QUALITY OF NATURAL OXIDE OF SILICON-BASED SURFACE BY ULTRAVIOLET LIGHT IRRADIATION

• Main Authors: SHIAO MING-HUA, WU JIA-YI, CHANG MAO-NAN, ZHAN CONG-YU, LIN JUN-TING
• Format: Patent
• Language: English; Japanese
• Published: 20.09.2018
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES; MEASURING; PHYSICS; SEMICONDUCTOR DEVICES; TESTING

PROBLEM TO BE SOLVED: To provide a device and a method which enable the increase in the quality of natural oxide of a silicon-based surface by ultraviolet light irradiation, and enable the efficient cost cutting.SOLUTION: A UV light source 1, of which the wavelength range is from 180 to 400 nm, comprises a mouthpiece 11, and a plurality of UV lamps 12 set on the mouthpiece. A humidity-controlled sample environment 2 is connected to the UV source, UV light is to be applied to a section of a sample 3 waiting for processing. The UV source is present in the humidity-controlled environment, and the section of the sample waiting for processing is directly exposed to the UV light. The humidity-controlled sample environment has a relative humidity lower than 40%, and involves a sealed quartz box 21 and a boarding ramp 22. In the sealed quartz box, a dried environment is to be created by setting the sample waiting for processing and a desiccating agent 23 in the sealed quartz box, and simply evacuating the sealed quartz box until reaching a vacuum condition.SELECTED DRAWING: Figure 1 【課題】紫外線照射によってケイ素系の表面天然酸化物品質を向上でき、また、効率的且つコストダウンできる、装置と方法を提供する。【解決手段】紫外線源１は、その波長範囲が１８０ｎｍから至４００ｎｍにあり、口金１１と複数の口金に設置された紫外線ランプ１２とを有する。湿度制御試料環境２は、紫外線源に連接され、処理待ち試料３の断面に紫外線を照射し、紫外線源は湿度制御環境内に存在して、直接に処理待ち試料の断面に照射する。湿度制御試料環境は、相対湿度が４０％よりも低く、封止石英箱２１と昇降台２２とを有する。封止石英箱に処理待ち試料と乾燥剤２３とを設置することや簡単な真空排気することにより、乾燥環境を作る。【選択図】図１