SEMICONDUCTOR MANUFACTURING APPARATUS

• Main Author: USAMI TATSUMI
• Format: Patent
• Language: English; Japanese
• Published: 20.09.2018
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing apparatus capable of suppressing reduction in an operation rate.SOLUTION: According to an embodiment, a semiconductor manufacturing apparatus includes a vacuum chamber, a rotation member, a first magnet, a second magnet, and a magnetic material. The vacuum chamber accommodates a substrate, and a target facing the substrate. The rotation member has a first surface positioned in a rear side of a target outside the vacuum chamber. The first magnet is arranged in a first surface. The second magnet has a magnetic pole opposite to that of the first magnet, and is arranged on the first side in an inside of the first magnet. The magnetic material is arranged between the first magnet and the second magnet, and is capable of reciprocally moving in a vertical direction.SELECTED DRAWING: Figure 1 【課題】稼働率の低下を抑制することが可能な半導体製造装置を提供する。【解決手段】実施形態によれば、半導体製造装置は、真空槽と、回転部材と、第１磁石と、第２磁石と、磁性体と、を備える。真空槽は、基板と、基板に対向するターゲットとを収容する。回転部材は、真空槽外においてターゲットの裏側に位置する第１面を有する。第１磁石は、第１面に設けられている。第２磁石は、磁極が第１磁石と反対であり、第１面において第１磁石の内側に設けられている。磁性体は、第１磁石と第２磁石との間に設けられ、鉛直方向に往復移動可能である。【選択図】図１