DIELECTRIC LAYER, OPTICAL RECORDING MEDIUM, SPUTTERING TARGET AND OXIDE

• Main Author: TAUCHI HIRONORI
• Format: Patent
• Language: English; Japanese
• Published: 30.08.2018
• Subjects: INFORMATION STORAGE; INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER; PHYSICS

PROBLEM TO BE SOLVED: To provide a dielectric layer capable of satisfactorily recording information in an oxide type recording layer directly laminated, and not need for measures to prevent health problems, and having high durability.SOLUTION: Dielectric layers 3 and 5 are formed of oxide containing at least one element of Sn element, Zn element, Zr element, Si element and Ga element, and for all elements other than oxygen in oxide, if the content of Sn element is a mol%, the content of Zn element is b mol%, the content of Zr element is c mol%, the content of Si element is d mol%, and the content of Ga is e mol%, satisfy the following formulas (1) to (7). 0≤b/(a+b)≤0.6...(1), 0≤(c+d)/(a+b+c+d+e)≤0.5...(2), 0≤b≤50...(3), 0≤c≤40...(4), 0≤d≤45...(5), 0≤e≤40...(6), 20≤b+c+d+e≤80...(7)SELECTED DRAWING: Figure 1 【課題】直接積層する酸化物系記録層において良好な情報記録が可能であり、健康障害防止対策の必要がなく耐久性が高い誘電体層を提供する。【解決手段】誘電体層３、５はＳｎ元素、Ｚｎ元素、Ｚｒ元素、Ｓｉ元素及びＧａ元素のうち少なくとも１種の元素とを含有する酸化物から形成され、酸化物の酸素以外の全元素に対しＳｎ元素の含有率をａモル％、Ｚｎ元素の含有率をｂモル％、Ｚｒ元素の含有率をｃモル％、Ｓｉ元素の含有率をｄモル％、Ｇａ元素の含有率をｅモル％とした場合に、下記式（１）から（７）を満たす。０≦ｂ／（ａ＋ｂ）≦０．６・・・（１）、０≦（ｃ＋ｄ）／（ａ＋ｂ＋ｃ＋ｄ＋ｅ）≦０．５・・・（２）、０≦ｂ≦５０・・・（３）、０≦ｃ≦４０・・・（４）、０≦ｄ≦４５・・・（５）、０≦ｅ≦４０・・・（６）、２０≦ｂ＋ｃ＋ｄ＋ｅ≦８０・・・（７）【選択図】図１