VAPOR DEPOSITION APPARATUS

PROBLEM TO BE SOLVED: To provide a vapor deposition apparatus capable of suppressing (or reducing) deposits on a facing surface.SOLUTION: In a vapor deposition apparatus 10, a flow channel 40 is formed in a horizontal direction by a susceptor 12 for holding a deposition substrate 14 and a facing sur...

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Bibliographic Details
Main Authors OISHI TAKAHIRO, SUDA NOBORU, KOMENO JUNJI, LIN PO-JUNG
Format Patent
LanguageEnglish
Japanese
Published 23.08.2018
Subjects
BASIC ELECTRIC ELEMENTS
CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
DIFFUSION TREATMENT OF METALLIC MATERIAL
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
METALLURGY
SEMICONDUCTOR DEVICES
SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Summary:PROBLEM TO BE SOLVED: To provide a vapor deposition apparatus capable of suppressing (or reducing) deposits on a facing surface.SOLUTION: In a vapor deposition apparatus 10, a flow channel 40 is formed in a horizontal direction by a susceptor 12 for holding a deposition substrate 14 and a facing surface 20 facing the susceptor 12. The flow channel 40 is provided with an inlet port 42 of material gas and an exhaust port 48 of the material gas and purge gas. The facing surface 20 is provided with a plurality of purge gas nozzles 36, and is divided into a plurality of purge areas PE1-PE3. The purge areas PE1-PE3 are provided with mass flow controllers (MFCs) 52A-52C, 62A-62C to adjust flow rate for each purge area, respectively. The MFC 52A-52C, 62A-62C control purge gas mass flow rates for the purge areas PE1-PE3, respectively.SELECTED DRAWING: Figure 1 【課題】対向面の堆積物を抑制（ないし低減）することができる気相成膜装置を提供する。【解決手段】気相成膜装置１０は、成膜用基板１４を保持するためのサセプタ１２と、該サセプタ１２に対向する対向面２０により、水平方向にフローチャネル４０が形成されている。該フローチャネル４０には、材料ガスの導入口４２と、材料ガス及びパージガスの排気口４８が設けられている。前記対向面２０には、多数のパージガスノズル３６が設けられており、複数のパージエリアＰＥ１〜ＰＥ３に分割されている。各パージエリアＰＥ１〜ＰＥ３には、パージエリア毎に流量を調整するマスフローコントローラ（ＭＦＣ）５２Ａ〜５２Ｃ，６２Ａ〜６２Ｃが設けられている。そして、パージエリアＰＥ１〜ＰＥ３毎に、前記ＭＦＣ５２Ａ〜５２Ｃ，６２Ａ〜６２Ｃでパージガスの質量流量を制御する。【選択図】図１
Bibliography:Application Number: JP20170026627