GALLIUM PHOSPHATE POLYCRYSTAL POWDER, AND PRODUCTION METHOD THEREOF

• Main Authors: KURITA FUMI, SHIMADA TAKESHI
• Format: Patent
• Language: English; Japanese
• Published: 23.08.2018
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F; COMPOUNDS THEREOF; CRYSTAL GROWTH; INORGANIC CHEMISTRY; METALLURGY; NON-METALLIC ELEMENTS; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

PROBLEM TO BE SOLVED: To provide gallium phosphate polycrystal powder having few heterogenous phases; and to provide a production method thereof.SOLUTION: There is provided a method for producing gallium phosphate(GaPO) polycrystal powder by mixing Ga raw material and P raw material, and by performing a heat treatment thereof. In the production method of the gallium phosphate polycrystal powder, the average particle diameter D50 of the Ga raw material is below 0.5 μm, and the Ga raw material and P raw material are mixed so that an atomic ratio between Ga and P falls in the range of 1.01<P/Ga<1.04 after the heat treatment, and a retention temperature of the heat treatment is over 950°C and below 1,100°C.SELECTED DRAWING: Figure 1 【課題】 異相が少ないリン酸ガリウム多結晶粉末及びその製造方法を提供すること。【解決手段】 Ｇａ原料とＰ原料を混合し、熱処理することで、リン酸ガリウム（ＧａＰＯ４）多結晶粉末を得る製造方法において、前記Ｇａ原料は、平均粒径Ｄ５０が０．５μｍ未満であり、前記Ｇａ原料とＰ原料を、ＧａとＰの原子比が熱処理後に１．０１＜Ｐ／Ｇａ＜１．０４となる範囲で混合し、前記熱処理の保持温度は、９５０℃超、１１００℃未満で行うリン酸ガリウム多結晶粉末の製造方法である。【選択図】 図１